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Hf:LiNbO3晶体的生长与其抗光损伤性能 被引量:4

GROWTH AND PHOTO-DAMAGE RESISTANCE OF Hf:LiNbO_3 CRYSTALS
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摘要 同成分LiNbO3(LN)中分别掺入摩尔分数为2%,4%,4.5%的HfO2,用提拉法生长3种Hf:LN晶体。测试了Hf:LN晶体光学均匀性和红外光谱。以质子交换法制备Hf:LN波导基片,采用全息法测量Hf:LN波导基片光损伤阈值。结果表明:Hf:LN晶体具有较高的光学质量;4%Hf:LN晶体和4.5%Hf:LN晶体的OH-吸收峰由LN晶体的3482cm-1移到3488cm-1。4%Hf:LN晶体和4.5%Hf:LN晶体光损伤阈值比LN晶体高1个数量级;掺4%Hf4+在Hf:LN晶体中达到阈值浓度。讨论了OH-吸收峰移动和Hf:LN晶体光损伤阈值提高的机理。 Hf-LiNbO3 (HP.LN) crystals doped with 2% (in mole, the same below), 4% and 4.5% HfO2 ill congruent LN were grown by the Czochralski method. The optical homogeneity and the infrared spectra of the Hf.LN crystals were researched. Hf-LN waveguide substrate was prepared by the proton transfer method. The photo-damage threshold of the Hf:LN waveguide substrate was measured by the holographic method. The results show that the Hf.LN crystals possess good optical quality. The OH- absorption peaks of 4% Hf.LN crystal and 4.5% Hf:LN crystal shift from 3 482 cm^-1 of LN crystal to 3 488 cm^-1. The photo-damage threshold of 4% Hf.LN and 4.5% Hf.LN crystals increase one order of magnitude compared with that of LN crystal, and doping with 4% Hf4+ concentration reaches the threshold concentration in Hf.LN crystal. The mechanism of absorption peaks movement and the photodamage threshold increment of Hf.LN crystals are discussed.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2008年第11期1586-1589,共4页 Journal of The Chinese Ceramic Society
关键词 掺铪铌酸锂晶体 光损伤阈值 双折射梯度 全息法 提拉法 hafiaium doped lithium niobate crystal photo-damage threshold birefringence gradient holographic method Czochralskimethod
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参考文献12

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二级参考文献19

共引文献37

同被引文献26

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