摘要
介绍了微晶玻璃及其化学机械抛光工艺,对其抛光机理进行了理论分析,重点对影响抛光速率和抛光质量的工艺参数转速、压力、流速作了详细的研究讨论,定量确定了最佳CMP工艺参数。在抛光液中加入了FA/OⅠ型活性剂以保护SiO2胶粒的双电子层结构。通过实验比较了在SiO2磨料碱性抛光液中加入CeO2对抛光速率的影响,得出了适合微晶玻璃晶片抛光的外界条件。在常温条件下工艺参数为转速60r/min、压力0.22MPa和流速210mL/min时,能够取得较高的抛光速率和较好的表面质量。
Chemical mechanical polishing technique of glass-ceramics and polishing mechanism were introduced. Polishing mechanism was abstractly analyzed. The factors of rotational speed, pressure, flow velocity and other process parameters, which influence polishing rate and polishing quality, were discussed in detail. And the best CMP process parameters could be quantified. Adding FA/O I surfactant to the slurry was to protect the double electronic shell of SiO2 sol. The remove rates with two kinds of slurry were compared, one is with SiO2 only, the other is fixed with CeO2. Through a mass of experiments the most appropriate polishing parameters of the glass-ceramic wafer was gotten, such as 60 r/min, 0.22 MPa and 210 mL/min, and eventually received a better surface quality and a higher polishing rate at the normal temperature.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第8期658-661,673,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(10676008)
高等学校博士学科点专项科研基金资助项目(20050080007)
河北省重点学科冀教高资助项目(2001-18)
关键词
化学机械抛光
微晶玻璃
氧化铈
chemical mechanical polishing
glass-ceramics
CeO2
