摘要
随着硬盘存储密度的增大、转速的提高、磁头飞行高度的降低,对硬盘基板材料及基板表面质量提出了更高的要求。采用纳米SiO2作为抛光磨料,在不同抛光液条件下(pH值、表面活性剂、润滑剂等),对玻璃基片化学机械抛光去除速率和表面质量的变化规律进行了研究,并利用原子力显微镜(AFM)和光学显微镜观察了抛光表面的微观形貌。结果表明,玻璃基片去除速率在酸性、碱性条件下变化趋势相近,即随着pH值的升高,材料去除速率先增大后减小。加入一定量的表面活性剂和润滑剂使得去除速率有一定程度的下降,但是表面粗糙度明显降低,并且表面没有出现颗粒吸附现象。
With the increasing capacity of hard disk of computer,the increasing rotational speed and the lowering distance between the magnetic head and substrate,higher requirements are set for chips of hard disk to choose materials and increase the formation of surface.Nano-SiO2 colloid was adopted to polish the glass substrate of hard disk under different polishing conditions（pH value of polishing slurry,surfactant,lubricant agent）,the chemical mechanical polishing removal rate of glass substrate was measured and the surface analyses were accomplished by atomic force microscope（AFM）and optical microscope.The results indicate that,under acidity or alkalinity condition,the material removal rate increases with pH walue to a maximum and then decreases.The material removal rate falls by adding surfactant and lubricant agent to polishing solution,but the roughness of the polished surface is obviously decreased which doesn＇t occur adsorption of particles.
出处
《润滑与密封》
CAS
CSCD
北大核心
2007年第11期24-27,共4页
Lubrication Engineering
基金
国家自然科学基金委员会与广东省政府自然科学联合基金重点项目(U0635002)
国际科技合作计划项目(2006DFA73350)
国家973计划项目(2003CB716201)
关键词
玻璃盘基片
化学机械抛光
表面粗糙度
glass substrate
chemical mechanical polishing（CMP）
surface roughness
