摘要
以获得高去除速率和低表面粗糙度为目标,建立了基于纳米氧化铈-硅溶胶复配混合磨料新模式。采用小粒径、低分散度的30 nm氧化铈-硅溶胶复配混合作为磨料,利用氧化铈对硅片表面化学反应产物硅酸胺盐的强络合作用,加快了硅衬底表面化学反应进程。分析了复合磨料抛光的机理,通过Aglient 5600LS原子力显微镜,测试了抛光前后的厚度及抛光后的硅片表面微粗糙度。实验结果表明,复合磨料抛光后硅片表面在10μm×10μm范围内粗糙度方均根值0.361 nm,表面微粗糙度降低16%以上,去除率为1 680 nm/min,硅CMP速率提高8%以上,实现了高去除速率、低表面粗糙度的硅单晶抛光。
To obtain both of much higher material removal rate （MRR） and lower surface micro roughness during CMP processing, the mixed nano abrasives mode forming with nano cerium oxide and silica sol combined together was established. By doping the 30 nm CeO2-SiO2 combined mixture technology with small nano size and low dispersion degree, and taking advantage of chemical reaction of CeO2with strong complexing function to silicon wafer surface, and the surface chemical reaction process with silicon substrate was accelerated. The mechanism of combined abrasives polishing was analyzed. The thickness of the wafer before and post CMP and the surface micro roughness post CMP were measured by Aglient 5600LS AFM. The results show that the micro roughness of silicon surface with root mean square （RMS） is 0. 361 nm by 16% decreased with 10 μm×10μm range obtained by combined abrasives polishing method. The MRR is high to 1 680 nm/min with 8% increased. By the method, it realized single silicon polishing with the rather higher MRR and lower surface micro roughness.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第1期51-54,共4页
Semiconductor Technology
基金
国家科技重大专项(2009ZX02308
2009ZX02011-005A)
关键词
纳米氧化铈
化学机械抛光
硅衬底
去除速率
粗糙度
ceria nano-particle
chemical mechanical polishing （CMP）
silicon substrate
removal rate
surface roughness
