摘要
A thin GaN LED film, grown on 2-inch-diameter sapphire substrates, is separated by laser lift-off. Atom force microscopy （AFM） and the double-crystal X-ray diffraction （XRD） have been employed to characterize the performance of Gan before and after the lift-off process. It is demonstrated that the separation and transfer processes do not alter the crystal quality of the GaN films obviously. InGaN/GaN multi-quantum-wells （MQW＇s） structure is grown on the separated sapphire substrate later and is compared with that grown on the conventional substmte under the same condition by using PL and XRD spectrum.
基金
the National Natural Science Foundation of China (No.60276029)
the 863 Project ( 2004AA3 11020 and 2006AA032409)
Natural Science Foundation of Fujian Province (2006H0092,A0210006,and 2005HZ1018).
