摘要
本文介绍0．7μm线分步重复投影光刻曝光系统的技术指标、系统设计、研制中解决的关键单元技术和研制结果。结果表明工作波长365nm，缩少倍率5倍．曝光视场15mm×15mm．光刻工作分辨力0．6μm，并具有双路暗场同轴对准．又能精确分步投影光刻的曝光系统已研制成功。
The technical properties and system design of 0. 7μm i-line projection lithography exposure system, the key unit technology and resoarch results are described. The results show that the stepper exposure system that has working wave length 365nm,reduction ratio 5x, exposure field 15mm ｘ 15mm and resolution 0. 6μm has beem fabricated successfully. The system has not only bipath dark field TTL, alignment,but also the precision step projection lithography.
出处
《微细加工技术》
1997年第4期1-7,共7页
Microfabrication Technology
