摘要
使用直流等离子体化学气相沉积（DC－PCVD）装置，控制合适的工艺参数，可对置于其阴阳极上的试样沉积出以Si3N4为主要成份的薄膜。提出了这种薄膜的形成机理。
Si3N4 film can be deposited on the samples which were put on the cathode and anode of DC-PCVD(direct current plasma chemical vapor deposition) device by controlling processing parameter. In this paper, the forming mechanism of thin film has been discussed
出处
《机械工程材料》
CAS
CSCD
北大核心
1997年第4期11-12,43,共3页
Materials For Mechanical Engineering
基金
国家自然科学基金!59471016
