摘要
用直流等离子体化学气相沉积装置(简称 DC-PCVD)在绝缘体蓝宝石上沉积了与基体结合力强的 TiN,探讨了机制及影响成膜的因素。
The thin film TiN that has been deposited on the insulation alundum by DCplasma chemical deposition(DC-PCVD)instrument has a strong adhesion to the substrate.The forming mechanism of thin film TiN and effect factor of the film quality have been dis-cussed.