摘要
通过化学气相沉积方法(CVD)制备了ZnO纳米线,并且利用微栅电极法制备了单根ZnO纳米线真空传感器.ZnO纳米线的电阻率随真空度的提高而降低,在p=10 Pa时,室温情况下的电阻约为高温情况下(T=325℃)的1000倍.而在p=1×105Pa时,室温情况的电阻是高温情况下的10倍.这种巨大变化主要是由于真空度迅速的升高,吸附在纳米线的表面的氧负离子进行了脱附的作用之后,使得耗尽层厚度降低,纳米线内部可参与导电的电子数增多,此时温度对纳米线的影响作用才会很大,导致纳米线电阻率迅速降低.
To study the electrical characteristics of single ZnO nanowire fabricated by chemical - vapor deposition （CVD） and device based on nanowire, and a vacuum pressure sensor was then fabricated using electrodes by Micro - gate. The resistance of nanowire was lower with temperature higher. The ratio of resistance with room and high temperature （ T = 325℃ ） is 1000 at p =10 Pa, while 10 at p = 1×10^5 Pa. The tremendous change is owing to desorption effect about O2- , O- at nanowire surface. More free electrons were released and leading to resistance was lower. It proves that the property of vacuum pressure sensor of single ZnO nanowire is mostly influenced by temperature after desomtion.
出处
《哈尔滨师范大学自然科学学报》
CAS
2012年第5期49-51,共3页
Natural Science Journal of Harbin Normal University
基金
黑龙江省教育厅科学技术研究重点项目(12521z012)
黑龙江省高等教育教学改革项目
