摘要
硅是供电(光)器件制作中重要的换能功能材料,为了选择国内采用放射性同位素氚研制辐射伏特效应核电池的加载方法,从多孔硅的制备方法出发,详细介绍了国外开展的氚在多孔单晶硅、无定型硅上的无载体加载工作,并结合其实验结果,理论分析了氚在硅表面的化学键合方式与释放行为。分析结果表明:为了得到较高的含氚量,在采用多孔单晶硅加载氚时,不仅要提高反应体系中氚的含量,还应提高硅的表面孔密度;在用无定型硅加载氚时,应控制好氚的沉积条件;新制作的氚化硅核电池在额外放电几天后才有稳定的电输出。
Silicon is an important material used for energinic exchange in betavoltaic devices and photoluminescence devices, Aiming to selecting the method of incorporating tritium into silicon in the process of preparation of betavoltaic batteries, this article introduces detailedly overseas researches relating to incorporating tritium into crystalline silicon and amorphous silicon without carriers. Also combining with their experiment results, the anticle analyzes theoretically the chemical bonding styles of tritium on the surface of silicon and its effusion. The result indicates that for the sake of achieving high-density tritium in silicon, not only the content of tritium in reaction system but also the density of pore should be increased when adoping porous crystalline silicon. The deposition conditions of tritium should be controlled well when adoping amorphous silicon. Tritiated silicon betavoltaic batteries newly prepared represent stable electric outputs after the discharge for a few days.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2008年第8期21-24,共4页
Materials Reports
基金
中国工程物理研究院科学技术发展基金资助项目(2007A02001)
关键词
氚
硅
加载
tritium, silicon, incorpatation
