摘要
采用化学腐蚀法、单槽电化学腐蚀法和双槽电化学腐蚀法来进行多孔硅的制备,通过对比这三种方法所制备多孔硅的表面形貌特征,发现双槽电化学腐蚀法与其它两种方法相比,具有孔径尺寸小(可达5～10 am)、均匀性好、腐蚀深度大(可达几百nm)等优点,其制备的多孔硅更符合在MEMS中应用的要求.最后对双槽电化学腐蚀法中腐蚀时间及电流密度对腐蚀速率的影响进行了研究.
Porous silicon was prepared by chemical etching, single-cell electrochemical etching and double-cell electrochemical etching. The shape of porous silicon prepared by above-mentioned methods was observed. The results show that the double-cell electrochemical etching is the best preparing method. The porous silicon obtained by this method has the smallest hole diameter (5~10 nm), good uniformity, and large depth (several hundred nm). Finally, studied are the etching time and current density of double-cell electrochemical etching which affect the etching speed of the porous silicon.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第6期32-34,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目(60071027
60371030)
