摘要
在国内首次研制出了一种采用条状元胞结构、特殊的栅槽刻蚀条件、特殊的栅介质生长前处理工艺及多晶硅栅的射频功率Trench MOSFET器件。该器件漏源击穿电压大于62V、漏极电流大于3．0A、跨导大于0．8S、阂值电压2～3V、导通电阻比同样条件的VDMOS降低了19％～43％，在175MHz、VDS=12VTN出功率Po为7W、漏极效率ηD为44％、功率增益GP为10dB。
The RF power Trench MOSFET device was first developed in domestic with a strip cell structure, special etching condition for the trench, special treatment method to the trench side- wall and the poly-silicon gate. The breakdown voltage of the device is more than 62 V, the source-drain current is more than 3. 0 A, the trans-conductance is more than 0. 8 S, and the threshold voltage is 2 - 3 V. Compared to VDMOS under the same condition, the on-state resistance is reduced by 19% - 43%. With 175 MHz and VDS = 12 V, the output power is 7 W, the drain efficiency is 44% and the power gain is 10 dB.
出处
《微纳电子技术》
CAS
2008年第7期380-382,386,共4页
Micronanoelectronic Technology
