摘要
介绍了一种以MEMS技术为基础的电容式硅微真空传感器。该传感器主要采用p+硅自停止腐蚀技术和阳极键合技术制作,形成了玻璃-硅-玻璃的三明治结构。传感器的传感元是经过浓硼扩散的硼硅膜,方形硼硅膜的应用使传感器具有更高的灵敏度;感应耦合等离子体刻蚀硼硅膜引出金属电极的方法使传感器的制作更为简单。该真空微传感器具有结构简单、灵敏度高等优点,其尺寸为5mm×6.4mm。该真空传感器的测量范围为5×10-3～6×10-2Pa,其线性度为5.9%,灵敏度比较稳定。
A capacitive micro-silicon vacuum sensor based on microelectromechanical system （MEMS） was introduced. The vacuum sensor was fabricated using p^＋-silicon etch-stop and anodic the sensor highly sensitive. The method of inductively-coupled plasma （ICP） was used to get metal electrode, which leads to make this structure easily. The sensor has the advantages of simple structure and high sensitivity, the area is 5 mm×6.4 mm. During the test in a vacuum chamber, the detective range is 5×10^-3-6×10^-2 Pa, the linearity is 5.9% and the sensitivity is steady.
出处
《微纳电子技术》
CAS
2008年第2期104-108,共5页
Micronanoelectronic Technology
关键词
微机电系统
传感器
自停止
阳极键合
三明治结构
micro electromechanical system （MEMS）
sensor
etch-stop
anodic bonding
sandwich structure
