摘要
用Ｘ射线光电子能谱（ＸＰＳ）技术，测量了射频磁控溅射法（ＲＦＭＳ）制备的硫化锌薄膜（ＺｎＳ：Ｅｒ３＋）的表面及内部构态，认为氧吸附形成的表面构态是产生薄膜界面态和界面陷阱能级的主要原因，对研究器件的激发过程有参考意义。
Three schemes for previous design of CCD driving circuit are discussed in detail,followed by analysis of their advantages and disadvantages.A new design method with simple and easy implementation is proposed.A practical design of TCD1200D driving circuit using this method is given as an example.
出处
《半导体光电》
CAS
CSCD
北大核心
1997年第4期228-230,235,共4页
Semiconductor Optoelectronics
基金
福建省自然科学基金
