摘要
Ｓｅｎｄｕｓｔ合金是制做薄膜磁头和ＭＩＧ磁头的理想材料，本工作用射频溅射法制备了Ｓｅｎｄｕｓｔ成分的ＦｅＳｉＡｌ合金薄膜，研究了制备条件对膜结构和软磁性能的影响，并对其机理进行了讨论。发现只有在适当的阳极电压范围（４．２～４．４ｋＶ）和基板温度（２５０℃）下才能制备出结晶完善的样品，从而获得良好的软磁性能。
FeSiAl alloy films with composition of Sendust were prepared by using rf sputtering equipment. The effects of preparing conditions on film structures and soft magnetic properties were investigated, and their mechanism was discussed. It was found that samples with perfect crystallites were produced only under the proper anode voltages(4.2～4.4kV) and substrate temperature(250℃),then we could obtain good soft magnetic properties.
出处
《功能材料》
EI
CAS
CSCD
北大核心
1997年第5期465-467,共3页
Journal of Functional Materials
基金
兰州大学博士科研启动基金
