摘要
考虑到nip型[ITO/a-Si(n)/a-Si(i)/a-Si(p)/Al]非晶硅光伏电池的各膜层厚度、掺杂浓度等因素,对非晶硅光伏电池的转换效率、填充因子、开路电压等性能参数进行了数值分析与讨论。结果表明,随p型层厚度的增加,光伏电池的短路电流密度、转换效率、开路电压值都有所增加。当本征层的厚度增加时,短波段内的光谱响应变差、内量子效率下降。当n型层厚度为5 nm,本征层厚度为5 nm,p型层厚度为10μm,受主掺杂浓度为2.5×1019cm-3,施主掺杂浓度为1.5×1016cm-3时,转换效率可达9.728%。
Taking into account the film layer thickness and silicon impurities of amorphous silicon solar cells with the nip-typeEITO/a-Si （n）/a-Si （i）/ a-Si （p）/Al] structure, the conversion efficiency, fill factor, and open circuit voltage of the nip-type amorphous silicon solar ceil are numerically analyzed and discussed. The results show that the short circuit voltage, conversion efficiency, and open circuit voltage increase as the thickness of p-type layer increases. With the increase in the thickness of intrinsic layer, the spectrum characteristics for the short wavelength range becomes worse and the quantum efficiency degrades. When the thickness of n-type, intrinsic, and p-type layers are 5 nm, 5 nm, 10μm, respectively, the conversion efficiency gets to 9. 728 % for the donor impurity concentration of 1.5×10^16cm^-3 and the acceptor impurities of 2.5×10^19cm^-3.
出处
《激光与光电子学进展》
CSCD
北大核心
2011年第9期157-160,共4页
Laser & Optoelectronics Progress
基金
国家自然科学基金(61077037)
河南省基础与前沿技术研究计划(102300413214)资助课题
关键词
光电子学
光伏电池
非晶硅
纳米薄膜
nip型
转换效率
optoelectronics
photovoltaic cell
amorphous silicon
nano-thin film
nip-type
conversion efficiency
