摘要
通过对Wilson等人由实验得出的Si，Ge，GaAs，GaP，InP，CdHgTe半导体和SiO2，Si3N4等绝缘基体中70多种注入元素相对灵敏度因子（RSF）值的综合分析，定义logFRS－Ii直线斜率为基体效应因子。发现基体效应因子值随基体平均原子序数的增加而增大，随基体平均电负性值的增大而减小，随基体氧化物生成热的增加而减小。应用本文提出的二次正离子发射理论分析式较好地解释了这些实验现象，并对影响基体效应的其他因素进行了进一步的讨论。
Based on the relative sensitivity factor (RSF) of the secondary ion mass spectrometry (SIMS) determined experimentally by Wilson et al. For up to 70 elements implanted into Si,Ge,GaAs,GaP,InP,CdHgTe semiconductors and SiO2,Si3N4 insulating materials,we have defined the slope of plots of logFRS versus the first ionization potential of elements as the matrix effects factor (MEF) in SIMS. It is found that the MEF depends on the average atomic numbers,the average electronegative value,and the elemental oxides formation heat. A theoritical model was proposed to tentatively give an explanation of the dependence. The possible factors affecting matrix effects in SlMS quantitative analysis are also discussed.
出处
《真空科学与技术》
EI
CSCD
北大核心
1997年第4期239-242,共4页
Vacuum Science and Technology
基金
中国航天工业总公司科技部资助
