摘要
在化学机械抛光(CMP)中,为了提高氧化铝磨料分散稳定性和防止团聚,利用丙烯酰氯对超细氧化铝进行了表面改性,并用XPS、激光粒度仪、SEM对其进行表征,结果表明改性后的超细氧化铝分散性明显提高。研究了改性后超细氧化铝在数字光盘玻璃基片中的化学机械抛光特性,即外加压力、抛光时间和下盘转速对玻璃基片去除量的影响,并对其CMP机制进行了推断。结果表明,材料去除量随下盘转速、压力变化趋势相近,即随着压力的增加或下盘转速的提高,材料去除量先增大后减小;随抛光时间延长,抛光初期材料去除量增加较快,但在后段时间内去除量增加趋势趋于平缓。
In order to enhance the dispersion stability of alumina abrasive and prevent agglomeration in chemical mechanical polishing（CMP）. The surface modification of ultra-fine Al2O3 with acryloyl chloride was studied and characterized by means of XPS, laser particle size analyzer and SEM. The results indicate that ultra-fine Al2O3 modified with acryloyl chloride has better dispersion stability than that unmodified. The polishing performances of modified uhra-fine Al2O3 on digital compact disc （ CD ） glass substrate were investigated. The influence of the pressure, polishing time and rotating speed on material removal amount in chemical mechanical polishing of digital compact disc glass substrate was discussed, and the CMP mechanism of glass substrate was deduced. The result shows that the material removal amount increases with pressure or rotating speed to a maximum and then decreases. With the increasing of polishing time, the material removal amount increases rapidly within 60 min and then increases slowly.
出处
《润滑与密封》
CAS
CSCD
北大核心
2007年第2期102-104,107,共4页
Lubrication Engineering
基金
国家自然科学基金项目(50575131)
关键词
化学机械抛光(CMP)
玻璃基片
表面改性
超细氧化铝
chemical mechanical polishing （CMP）
glass substrate
surface modification
ultra-fine Al2O3
