摘要
研究了氢离子注入后锗表面的剥离情况,观察发现其表面剥离的情况与Si相比有明显不同,H+注入后形成的微气泡层并没有导致Ge表面形成类似砂眼的凹坑,而是整个表层薄膜受H+膨胀压力导致其全部脱落。利用特殊的Ge的清洗工艺,完成了注H+的Ge片与热生长SiO2片的键合,通过热处理完成SiO2上的Ge薄膜转移,形成了GOI(Germanium-on-insulator)结构。采用扫描电镜(SEM)、原子力显微镜(AFM)、以及X射线四晶衍射对GOI的微结构进行了表征和分析。研究表明,获得的GOI中顶层Ge具有较好的晶体质量,锗和二氧化硅埋层界面陡直。
The surface morphology of hydrogen implanted Ge wafers was investigated. Different from that of hydrogen implanted Si wafer, no obvious blisters were observed, but the whole top Ge layer departed from substrate. Germanium- on -insulator （GOI） materials have been fabricated successfully by using modified smart - cut technology, which includes moderate H^＊ dose implantation, special cleaning process of Ge wafer, low temperature wafer bonding and subsequent thermal treatment. Scanning electron micro- scope （ SEM）, atomic force microscope （AFM） and four characterize microstructure of GOI materials. The results -crystal X -ray diffraction have been used to demonstrate that the top Ge layer of GOI has good single crystal quality, and the interface between Ge and buried silicon dioxide is sharp and uniform.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2007年第3期207-212,共6页
Journal of Functional Materials and Devices
