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SOI技术的新进展 被引量:4

New progress in SOI technology
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摘要 通过对最近两次 SOI国际会议的分析,了 SOI技术取得的新。三种 SOI技术 SIMOX, Smart- cut和 BESOI已走向商业化 ,在高温与辐射环境下工作的 SOI电路也走向了市场。 近来人们更加重视 SOI技术,是因为 SOI在实现低压、低功耗电路上的突出优越性。 The new progress at the Silicon- On- Insulator (SOI) technology is reviewed, according to the analysis of the recent two SOI international conferences. Three techniques, SIMOX, Smart- cut and BESOI,become very successful and commercially in producing SOI material. SOI devices have been used in several market applications such as high temperature and radiation hard integrated circuits. Recent- ly much attention has been paid to SOI technology, because the most prominent advantage of SOI circuits is its ability to realize low voltage/low power.
作者 林成鲁
出处 《功能材料与器件学报》 CAS CSCD 2001年第1期1-6,共6页 Journal of Functional Materials and Devices
关键词 SIMOX SMART-CUT 低压低功耗电路 SOI技术 SOI SIMOX Smart- cut Low voltage/low power
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  • 1林成鲁.第三届全国SOI技术研讨会论文集[M].上海,1997,5.1.
  • 2林成鲁 俞跃辉 等.-[J].中国科学,A辑,1990,9:976-976.
  • 3Zhang M,Appl Phys A,1998年,66卷,521页
  • 4Zhang M,Appl Phys Lett,1998年,72卷,830页
  • 5Gao J X,J Phys Condens Matter,1998年,10卷,4393页
  • 6林成鲁,第三届全国SOI技术研讨会论文集,1997年
  • 7Yu Y H,J of Materials Sciences,1995年,30卷,3539页
  • 8Zhu W H,Appl Phys Lett,1991年,59卷,210页
  • 9林成鲁,中国科学.A,1990年,9卷,976页
  • 10Lin C L,Appl Phys Lett,1989年,56卷,2004页

共引文献11

同被引文献31

  • 1International Technology Roadmap for semiconductor,SIA, 2001.
  • 2Wong H S P. Beyond the conventional transistor[J]. IBM J RES & DEV, 46(2/3): 133 - 168.
  • 3Jvi—Tsong Lin,Shih—chang Chang,et a1.Recessed Multi—Gate SOI MOSFET in deep decanonometer Regime【A】IEEE 2001 International SOI Conference[C],47—48.
  • 4Xue—jue Huang,Wen—Chin Lee,Charles Kuo.Sub-50nm P—Channel FinFET【J】.IEEE Trans on DE,2001,48(5):880—886.
  • 5Michael I Current,Shari N Fattens,et al.Atomic—layer Cleaving with SixGey,strain layers for fabrication of Si and Ge—rich SOI devices layers[A].IEEE 2001 International SOI Conference[C],11—12.
  • 6Yee Chia yeo, Vivek Subramanian, Jakub Kedzierski, et al.Nanoscale ultra - thin - body silicon - on - insulator p -MOSFET with a SiGe/Si heterostructure channel[J], IEEE Electron Device Letters, 2000, 21(4): 161 - 163.
  • 7SORIN Cristoloveanu.Introduction to silicon on insulator materials and devices[J].Microelectronic Engineering,1997,39:145-154.
  • 8IBM advanced chip technology with breakthrough for making faster,more efficient semiconductors.http://www.ibm.com/news/1998/08/03.html.
  • 9EIMORI J,OASHI T.Approaches to extra low voltage DRAM operation by SOI-DRAM[J].IEEE Trans Elec Dev,1998,45(5):1 000-1 009.
  • 10ASPAR B,BRUEL M,MORICEAU H,et al.Basic mechanisms involved in the smart-cut process[J].Microelectron Eng,1997,36 (1-4):233-240.

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