摘要
为了更深入的了解GaAs经氢离子注入后的剥离特性,实验研究了GaAs晶片经6×1016/cm2剂量氢离子以不同能量注入,再经过不同温度和不同时间的退火过程后,晶片表面的剥离情况。研究表明:注入能量小的晶片较容易表面剥离,当注入能量大到一定程度,表面将不会出现剥离的现象;在相同的注入能量情况下,GaAs晶片的表面剥离随着退火温度的升高、退火时间的增加变得更加的显著。晶片在300℃下退火后,未发现有剥离现象,实验发现GaAs的临界剥离温度在300-400℃之间。研究结果有助于优化GaAs/Si异质结构材料的智能剥离制备工艺。
This experiment is aimed to find out the characteristics of surface blistering of GaAs. Surface blistering of 6 ×10m/cm^2 dose hydrogen ion implanted GaAs wafers were investigated as a function of implantation energy, annealing temperature and annealing time. It shows that blistering is easier to be trig- gered for wafers with lower implantation energy. Blistering does not occur if the energy is larger than a certain value. With the same implantation energy, surface blistering becomes more obviously with increasing the annealing temperature and prolonging the annealing time. After 300℃ annealing , no blistering is found in the surface of wafer, which indicates that critical temperature of blistering is between 300℃ and 400℃. Above results can be used to optimize the Smart - Cut process for fabrication of GaAs/ Si multi -layer materials.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2007年第1期59-62,67,共5页
Journal of Functional Materials and Devices
基金
国家自然科学基金资助项目(No.60106001No.60476032).
