摘要
用熔盐提拉法生长出优质Cr·Bi12SiO2单晶，并在氧气中对晶体进行了退火处理，测定了晶体的吸收光谱，分析了Cr离子在Bi12SiO20晶体中的价态随退火条件的变化情况。首次发现，Cr：Bi12SiO20晶体中Cr3+外，还存在着少量Cr4+。
Pure and Chrome-doped Cr;Bi12SiO20 (BSO) Crytals were grown by melt method.The Crystals were annealed in oxygen. The absorption spectra of the Crystals were measured-The change of valance state of Cr ions in BSO Crystals is discussed on the basis of themeasurement of transmissivity. The conclusion that there were a few Cr4+ besicles Cr3+ in Cr:Bi12SiO20. Crystals was found for the first time.
出处
《黑龙江大学自然科学学报》
CAS
1997年第1期105-107,共3页
Journal of Natural Science of Heilongjiang University
基金
航天基金
关键词
掺杂
晶体生长
退火
吸收光谱
硅酸铋晶体
铬
Doped Bi_(12)SiO_(20) crystal
Crystal growth
Annealing
Absorption spectrum
