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SAPMAC法生长大尺寸蓝宝石单晶工艺研究 被引量:3

Study on the technology of large size sapphire single crystal growth by SAPMAC
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摘要 采用冷心放肩微量提拉法(SAPMAC法)在真空条件下,选择〈1010〉方向的籽晶成功生长了尺寸为φ220×200mm的大尺寸蓝宝石晶体,生长时结晶区温度梯度为0.5—1.0℃/mm,生长速度为0.1-2mm/h.对生成晶体的透射率进行了检测,测试结果表明在2500—4000cm^-1范围内,1mm厚度蓝宝石晶片的透过率达85%以上. Aφ220 ×200 mm sapphire crystal, with 〈 1010 〉 oriented had been grown by sapphire growth technique with micro-pulling and shoulder at cooled center (SAPMAC) method. In the research, the temperature gradient of the crystallization region was 0. 5 - 1.0 ℃/mm and the growth velocity was 0. 1 -2 mm/h in vacuum environment. The result shows the transmission of the sapphire slice with 1 mm thickness is at least 85% in the range from 2 500 to 4 000 cm^-1.
出处 《哈尔滨工业大学学报》 EI CAS CSCD 北大核心 2007年第5期794-796,共3页 Journal of Harbin Institute of Technology
关键词 冷心放肩微量提拉法 蓝宝石单晶 透过率 SAPMAC sapphire single crystal transmission
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