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SAPMAC法生长蓝宝石晶体的温场设计、工艺分析与控制 被引量:9

Temperature Field Design, Process Analysis and Control of Sapphire Crystals by SAPMAC Method
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摘要 采用SAPMAC法,以α向为结晶取向,生长出φ240mm×210mm,重27.5kg的完整透明的蓝宝石单晶.从理论上探讨了缺陷密度及晶体开裂与温度分布、生长速率、冷却速率等晶体生长工艺参数之间的关系.设计了SAPMAC法生长大尺寸晶体的最佳温场分布、工艺控制.利用专用设备加工出大尺寸晶棒、板状窗口,并测试了标准样品的红外透过性能. The transparent sapphire crystal of 240mm in diameter, 210mm in length and 27.5kg in weight was grown successfully along α axis by the SAPMAC method. The relationship between temperature field distribution, growing speed, cooling rate and the density of defects, crack of crystal was discussed theoretically. The optimized temperature field distribution and process control to grow large scale crystals by the SAPMAC method were designed. Large scale sapphire rod and plank window were manufactured with special equipments. The infrared transmittance property of a standard specimen was measured as well.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2007年第2期344-348,共5页 Journal of Inorganic Materials
基金 教育部跨世纪人才资助
关键词 蓝宝石 冷心放肩微量提拉法 温度场设计 工艺优化 sapphire SAPMAC method temperature field design process optimization
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