摘要
ａ－ＳｉＧｅ∶Ｈ材料的光电性能强烈地依赖于沉积条件，选择适当的氢稀释率、气体压强、掺锗率和辉光功率，获得了光带隙为１．４５ｅＶ，光暗电导比为１．
a SiGe∶H film is intensely depended on the deposition conditions.High quality a SiGe∶H films with the band gap of 1 45eV and the photosensitivity of 10 5 were obtained with fit hygrogen dilution,gas press,doping ratio of Ge and RF power.
基金
国家"八五"计划
天津市"21世纪青年科学基金"的资助
