摘要
详细论述Si/SiGe量子级联激光器的工作原理,通过对比找到一组合适的Si,Ge和SiGe合金的能带参数,进而应用6×6k.p方法计算了不同阱宽、不同Ge组分Si/Si1-xGex/Si量子阱价带量子化的空穴能级本征值及其色散关系,分析Si/Si1-xGex/Si量子阱空穴态能级间距随阱宽和组分的变化规律,最后应用计算结果讨论了Si/SiGe量子级联激光器有源区的能带设计,有益于优化Si/SiGe量子级联激光器结构.
This paper introduces in detail the working principle of Si/SiGe Quantum cascade laser（QCL）. Appropriate parameters are used to calculate the hole subband structure of Si/Si1-x Gex quantum well using a six-band k·p method. The dispersion relation and energy band for different layer thickness and compositions are investigated. Meanwhile, the energy separations between hole subbands in Si/Si1-x Gex /Si quantum wells are also analyzed. Finally the calculated results are used for the Si/SiGe QCL design, which will be beneficial to the structure optimization of Si/SiGe QCL.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第7期4137-4142,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60576001
60336010)
福建省青年科技人才创新基金(批准号:2004J021)资助的课题.~~
关键词
硅锗材料
量子级联激光器
子带跃迁
k·P方法
SiGe material, quantum cascade laser, intersubband transitions, k·p method
