摘要
本文对含氮ＣＺ硅单晶中的氧施主进行了探讨。测试样品是６５０℃下处理过的含氮ＣＺ硅单晶在７００℃的温度下继续热处理，通过变温霍尔测试发现，材料中除了热施主外，还存在一种浅施主能级（０．０４ｅＶ）。这种浅施主在６５０℃下不能完全消除。
This paper studys Oxygen-related donors in nitrogen contained Czochralski grown silicon cystals. Datas of Hall Effect measurement at varient temperature showed the existance of a shallow donor level of 0 04eV.The samples are thermal treated at temperature of 650℃ and 700℃.The shallow donors exist after 650 ℃ thermal treatment but decrease after 700℃ thermal treatment.
