摘要
本文研究了微氮硅单晶在经历不同温度热处理时电阻率的变化,发现在700℃以上退火时,n型微氮硅单晶的电阻率首先上升,随后逐渐下降,保持一稳定值,而p型微氮硅单晶的电阻率变化则相反.实验证明微氮硅单晶在 7 00℃以上退火时,产生了热受主(T A),其浓度可达 2 ×10^(14)个/cm^3,它的产生是氧氮杂质共同作用的结果,可能是一种硅中氮氧复合物.
The resistivity variation of the slightly N-doped silicon during different temperature an-nealings is investigated.It is found that the resistivity of n-type N-doped Si increases initiallyand reaches a maximum, then falls down during annealing at temperatures higher than 700℃.On the contrary,the resistivity of p-type decreases at the same annealing condition.It isshown that the thermal acceptor(TA) is formed in slightly nitrogen-doped silicon.The ther-mal acceptor concentration can reach as high as 2.0×10^(14)atom/cm^3.The authors believe thatthe thermal acceptor is origined from the complex of oxygen and nitrogen atoms.
