摘要
利用四探针测试和三点弯曲法研究了掺入等价元素Ge的CZSi 450℃退火时晶体电学参数稳定性和硅片机械强度．发现Ge能抑制CZSi中氧施主的形成，降低热施主的形成速率和最大浓度，改善硅材料的内在质量，提高硅片的机械强度，以杂质量级掺入到硅中的Ge对提高硅材料的综合性能是有益的．
：The effects of Ge on oxygen donor behavior in CZSi and mecha nical strength of CZSi slice were examined by measurement of using Fou r-Point probe and Three-Point warping stress instrument.The results in dicated that sfter Ge doped in CZSi,thermal stability of CZSi at 450 ℃ annealing had been risen,concentration of thermal donor had been redu ced,mechanical strength and material quality cna achieve improvement l argely.Thus,doping Ge in CZSi is a way of developing new function mat erial .
出处
《河北工业大学学报》
CAS
2001年第2期12-14,共3页
Journal of Hebei University of Technology
基金
河北省自然科学基金资助项目!(500016)
关键词
热施主
热退火
机械强度
杂质氧
直拉单晶硅
锗
：thermal donor；annealing；Si doped Ge；mechanical strength；[Oi]impurity
