摘要
室温下使用40 keV He离子注入单晶Si样品到剂量5×1016 cm-2,分别采用透射电子显微镜(TEM)、热解吸谱仪(THDS)、光致发光谱仪(PL)详细地研究了随后热处理过程中He注入空腔的形成、He气体原子的热释放以及注入损伤引起的光致发光特性。结果表明,He离子注入及随后的高温热处理会在单晶Si中产生宽度约为220nm的空腔带,同时伴随着He气体原子从注入产生的缺陷中释放出来。He气体原子的热释放可以明显地分为两个温度阶段,分别对应于He原子从小的空位型缺陷和大的空腔中的热释放。此外,He离子的注入还会在单晶Si中产生明显发光中心,导致了波长约为680nm和930nm的两个光致发光带。该光致发光带的出现可能跟He离子注入及退火过程中产生的纳米Si团簇有关。
Crystalline Si samples were implanted at room temperature with 40 keV He ions at a dose of 5×10^16 cm^-2, and then subjected to thermal annealing at different temperatures. Various techniques, such as transmission electron microscopy （TEM）, thermal desorption spectroscopy （THDS） and photoluminescence （PL）, have been used to investigate damage creation, helium release, luminescence properties and their thermal evolutions. Our results clearly show that He ion implantation followed by annealing induces formation of a well-defined band of cavities. Helium thermal release occurs in two distinguished temperature regions, which correspond to helium release from smaller vacancy-like defects and cavities, respectively. Moreover, He ion implantation can also induce luminescence centers in silicon, which gives rise to photoluminescence bands centered at wavelengths of about 680 nm and 930 nm, respectively. The PL bands may be associated with the formation of silicon nano-clusters produced by the He ion implantation and subsequent thermal annealing.
出处
《核技术》
EI
CAS
CSCD
北大核心
2007年第4期269-272,共4页
Nuclear Techniques
基金
天津市自然科学基金项目(06YFJMJC01100)
国家自然科学基金项目(10675089)资助
关键词
单晶Si
He离子注入
空腔
He原子热释放
光致发光
Crystalline silicon, He ion implantation, Cavities, Helium release, Photoluminescence
