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用于光电集成的InP基HBT新结构 被引量：6

A Novel Structure of InP Based HBT for OEIC
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摘要 对用于光电集成(OEIC)的InP基异质结双极性晶体管(HBT)进行了分析,提出了一种新的集电区外延结构,该结构是在单HBT(SHBT)的集电区与次集电区间加入特定厚度与掺杂浓度的p-InGaAs层和n-InP层,既适用于集成光探测器,又较好地解决了SHBT反向击穿电压低、传统双HBT(DHBT)电子堆积效应等问题,并具有外延层生长简单、集电区电子漂移速率高等优点。 The InP based HBT （heterojunction bipolar transistor used for OEIC （optoelectronic integrated circuits） is analysed,and a novel collector layer structure is proposed, which is achieved by introducing p-InGaAs layer and N-InP layer with specific thickness and doping level between the collector and subcolleetor of SHBT（single heterojunetion bipolar transistor）. This composite collector structure is suitable for integrated pin photodetector and solves the poor breakdown voltage of SHBT and the electron blocking efforts of traditional DHBT（double heterojunetion bipolar transistor）. In addition, the epitaxy layer of this structure is easy to grow and the electron velocity of collector is high.
作者 崔海林 任晓敏 黄辉 李轶群 王文娟 黄永清
机构地区 北京邮电大学光通讯研究中心
出处 《光电子．激光》 EI CAS CSCD 北大核心 2007年第3期263-266,共4页 Journal of Optoelectronics·Laser
基金 国家重点基础研究"973"计划资助项目(2003CB314900) 高等学校博士学科专项科研基金资助项目(20020013010)
关键词 光电集成(OEIC) 异质结双极性晶体管(HBT) 复合集电区 optoelectronic integrated circuit（OEIC） heterojunction bipolar transistor（HBT） composite collector
分类号 TN312 [电子电信—物理电子学]
  • 相关文献

参考文献14

  • 1Huber D,Bauknecht R,Bergamaschi C,et al.InP-InGaAs SHBT tech.for photoreceiver OEIC's at 40 Gb/s and beyond[J].IEEE Jour Lightwave Tech,2000,18:992-1000.
  • 2Lunardi L M,Chandrasekhar S,Gnauck A H,et al.20 Gb/s monolihic p-i-n/HBT photoreceive module for 1.55 μm applications[J].IEEE Photon Technol Lett,1995,7:1201-1203.
  • 3Westergren U.Haga D,Willen B.Monolithic optoelectronic receivers with up to 24 GHz bandwidth using InP pin-HBT technology[A].23 th Eur Conf Optical Commun[C].1997,4:105-108.
  • 4武鹏,黄辉,黄永清,任晓敏.新型的波长选择波导光电探测器的研究[J].光电子．激光,2005,16(2):129-134. 被引量：4
  • 5周震,杨晓红,韩勤,杜云,彭红玲,吴荣汉,黄永清,任晓敏.GaAs/GaInNAs多量子阱谐振腔增强型长波长光探测器[J].光电子．激光,2005,16(2):159-163. 被引量：3
  • 6Jiann S Yuan.SiGe,GaAs,and InP Heterojunction Bipolar Transistors[M].New York:John Wiley & Sons,1999.
  • 7Chor E F,Peng C J.Composite step-graded collector of InP/InGaAs/InP DHBT for minimized carrier blocking[J].Electronics Letters,1996,32:1409-1413.
  • 8Kurishima K,Nakajima H,Kobayashi T.InP/InGaAs double-heterojunction bipolar transistor with step-graded InGaAsP collector[J].IEEE Jour Lightwave Tech,1993,29:258-262.
  • 9Garcias-Salva P,Lopez-Gonzalez J P,Prat L.A comparison between Monte Carlo and extended drift-diffusion models for abrupt InP/InGaAs HBTs[J].IEEE Trans Electron Devices,2001,48(6):1045-1051.
  • 10Yang K,East J R,Haddad G I.Numerical modeling of abrupt heterojunction using a thermionic-field emission boundary condition[J].Solid-State Electron,1993,36(3):321-326.

二级参考文献22

  • 1HUANG Hui WANG Xing-yan HUANG Yong-qing et al.Long wavelength resonant cavity photodetectors with InP/air-gap Bragg mirrors.Chinese Journal of Semiconductors(半导体学报),2004,25(2):170-173.
  • 2Jasmin S,Vodjdani N,Renaud J C,et al.Diluted- and distributed- absorption microwave waveguide photodiodes for high efficiency and high power[J].IEEE Trans Microwave Theory and Tech,1997,45(8):1337-1341.
  • 3Tang J,Zheng Q.Applied Optics of Thin-film[M].Shanghai:Shanghai Science and Technology Publishing House,1984.49-51.(in Chinese)
  • 4Ren X M,Campbell J C.Theory and simulations of tunable two-mirror and three-mirror resonant cavity photodetectors with a built-in liquid-crystal layer[J].IEEE J Quantum Electron,1996,32:2012-2025.
  • 5HUANG Hui.Research on key devices for WDM optical receiver.Chapter 5 one-mirror inclined three-mirror-cavity demultiplexing receiver device[D].Beijing:Beijing University of Post and Telecommunication.(in Chinese)
  • 6Chao C P,Shiau G L,Forrest S R.1.3 μm wavelength,InGaAsP/InP folded-cavity surface-emitting grown by gas source molecular beam epitaxy[J].Photon Technol Lett,1994,6:1406-1408.
  • 7Unl(u) M S,Strite S.Resonant cavity enhanced photonic de-vices[J].J Appl Phys,1995,78(2):607-639.
  • 8Amann M C.Analysis of a pin photodiode with integrated waveguide[J].Electron Lett,1987,28:885-887.
  • 9Kato K,Hata S,Kawano K,et al.A high-efficiency 50GHz InGaAs multimodes waveguide photodetector[J].IEEE J Quantum Electron,1992,28:2728-2735.
  • 10Magnin V,Giraudet L,Harari J,et al.Design,optimization,and fabrication of side-illuminated p-i-n photodetectors with high responsivity and high alignment tolerance for 1.3 and 1.55 μm wavelength use[J].IEEE Lightwave Tech Lett,2002,20(3):477-488.

共引文献5

同被引文献62

引证文献6

二级引证文献7

光电子．激光
2007年 第3期

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