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高性能硅光电探测器设计及温度特性研究 被引量：2

Design of High Performance Si Photoelectric Detectors and Analyse of Temperature Characteristic
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摘要 采用适当的器件工艺和特制2mm厚无附加镀层光学玻璃滤光片,使所研制的绿光Si光电探测器的最大量子效率η达到91%,光响应信噪比(SNR)大于1×104。对该Si光电探测器在零偏下的光电流温度特性进行了测量,并对结果做了较深入的理论分析。 With proper device technics and special optical glass filter （2 mm thickness, without covered layer）, we improved the primary parameters of the semiconductor photoelectric detectors. The signal-to-noise ratio （SNR） reaches 1 × 10^4 , and the highest quantum efficiency amounts to 91%. This paper introduced the technics in detail. The temperature characteristic at 0 voltage was measured and analysed.
作者 闫阳 肖夏 姚素英 郑云光 张寅辰
机构地区 天津大学电子信息工程学院 天津第五半导体器件厂
出处 《光电子．激光》 EI CAS CSCD 北大核心 2007年第1期46-48,共3页 Journal of Optoelectronics·Laser
关键词 Si光电探测器 信噪比(SNR) 温度特性 Si photoelectric detectors signal-to-noise ratio （SNR） temeprature characteristic
分类号 TN365 [电子电信—物理电子学]
  • 相关文献

参考文献5

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共引文献3

同被引文献16

  • 1张福甲,李东仓,桂文明,戴志平.新型PTCDA/p-Si光电探测器[J].光电子．激光,2005,16(8):897-900. 被引量：12
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光电子．激光
2007年 第1期

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