摘要
提出了一种功率AlGaAs/GaAsHBT的自加热温度模型,讨论了在大电流条件下,器件晶格温度升高和基区扩展效应对HBT器件频率特性的影响,并对器件的晶格温度、截止频率和最高振荡频率在自加热条件下的变化分别进行了计算和模拟.
A selfheating model is presented to predict the highfrequency performance of AlGaAs/GaAs heterojunction bipolar transistors (HBT's) including high current and thermal effects. A base pushout effect is discussed at high current region. And in this case, the lattice temperature, the cutoff frequency and the maximum frequency versus the collector current density are achieved.
出处
《计算物理》
CSCD
北大核心
2003年第5期467-470,共4页
Chinese Journal of Computational Physics
