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利用金属过渡层低温键合硅晶片 被引量：6

Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals
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摘要 在Si/Si之间采用Ti/Au金属过渡层,实现了Si/Si低温键合,键合温度可低至414℃.采用拉伸强度测试对Si/Si键合结构的界面特性进行测试,结果表明,键合强度高于1.27MPa;I-V测试表明,Si/Ti/Au/Ti/Si键合界面基本为欧姆接触;X射线光电子能谱(XPS)测试结果进一步表明,界面主要为Si-Au共晶合金.不同温度的变温退火实验表明,键合温度越高,键合强度越大,且渐变退火有利于提高键合强度. Si/Si bonding has been achieved at low temperatures by introducing Ti/Au layers. The bonding temperature can be reduced to 414℃. The Si / Si bonding strength has been investigated by tensile strength. The results show that the bonding strength exceeds 1.27MPa. I-V tests show that the interface of Si/Ti/Au/Ti/Si is an ohmic contact, and XPS tests indicate that the interface mainly comprises Si-Au eutectic alloy. Different experiments by annealing at gradually changing tempera- ture show that the higher the bonding temperature is,the stronger the bonding energy is. In addition, annealing at gradually changing temperature is propitious to increase bonding strength.
作者 张小英 陈松岩 赖虹凯 李成 余金中
机构地区 厦门大学物理系半导体光子学研究中心
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第2期213-216,共4页 半导体学报（英文版）
基金 国家自然科学基金(批准号:60336010) 福建省自然科学基金(批准号:A0410008)资助项目~~
关键词 硅片键合 界面特性 金属过渡层 键合机理 wafer bonding interface characteristic intermediate metals bonding mechanism
分类号 TN304.05 [电子电信—物理电子学]
  • 相关文献

参考文献10

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共引文献23

同被引文献35

  • 1CHEN MingXiang,LIU WenMing,XI YanYan,LIN ChangYong,LIU Sheng.Wafer level bonding using localized radio-frequency induction heating[J].Science China(Technological Sciences),2010,53(5):1252-1257.
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  • 3张东梅,丁桂甫,汪红,姜政,姚锦元.MEMS器件气密性封装的低温共晶键合工艺研究[J].传感器与微系统,2006,25(1):82-84. 被引量：8
  • 4刘兵武,张兆华,谭智敏,林惠旺,刘理天.用于MEMS器件的单面溅金硅共晶键合技术[J].半导体技术,2006,31(12):896-899. 被引量：5
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引证文献6

二级引证文献17

Journal of Semiconductors
2007年 第2期

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