摘要
采用电阻率为10000-20000Ω·cm的高阻单晶硅材料，研制成功灵敏区尺寸为φ60mm，耗尽层厚度-1000μm的大面积厚PIN半导体探测器．设计了该类探测器厚度测量专用的反冲质子测量系统，对探测器的时间响应、γ灵敏度、漏电流、γ／n分辨等物理参数进行了测量和分析，结果表明，这类探测器可满足低强度裂变n/γ混合场中脉冲γ强度测量的需要．
Using high-resistivity （10000-20000 Ω·cm） n-type Si wafers, we have developed 460 PIN semiconductor detector with depletion thickness -1000 microns for low-intensity pulsed γ-ray flux measurement. For determination of thickness of the depletion depths, a recoil proton chamber with 20% scattering angle has been constructed. The detector＇ s performance have been measured and analyzed, which indicates that the developed detector satisfactorily meets the expected specifications. Compared with the existing detectors with depletion depths of 200-300 microns, the detector has much greater γ detecting sensitivity and suited for measuring pulsed γ-my flux in low-intensity mixed γ/n fields.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第3期1353-1357,共5页
Acta Physica Sinica
关键词
大面积
电流型
半导体探测器
强度测量
large area PIN detector, current mode, semiconductor detector
