摘要
采用真空提纯工艺对棒状多晶硅原料进行了区熔(FZ)提纯,之后对提纯后的多晶硅进行单晶生长。通过检测每次提纯后的多晶硅和最终生长成的硅单晶的电阻率变化,得到了真空提纯工艺对电阻率变化的影响规律。之后,通过计算得到了原料中主要杂质磷杂质在每次真空提纯后的去除量,并讨论了磷杂质去除量对材料导电类型的影响。分析认为真空提纯工艺具有较高的提纯效率,通过真空提纯工艺可大幅提高材料的纯度和电阻率。提出要研制n型高纯高阻硅单晶,还需通过真空提纯工艺精确地控制硼、磷杂质的相对含量,并充分考虑杂质在径向上的分布规律。
The float zone（FZ）purification of the rod polysilicon materials was carried out by the vacuum purification process,and then the single crystal growth of the purified polysilicon was conducted.By measuring of the resistivity changes of the polysilicon and the final silicon single crystal after every purification,the effect of the vacuum purification process on the resis-tivity change was obtained.After that,the removal amount of the main impurity phosphorus in the material was calculated after every vacuum purification,and the effect of the removal amount of phosphorus on the conduction type of the material was discussed.The analysis suggests that the vacuum purification process has high purification efficiency,and can greatly improve the purity and resistivity of the material.In order to prepare the n-type silicon single crystal with the high purity and high resistivity,the relative content of the boron and phosphorus impurities need to be controlled precisely by the vacuum purification process,meanwhile,the radial distribution rule of the impurity need to be considered fully.
出处
《微纳电子技术》
CAS
北大核心
2015年第10期676-680,共5页
Micronanoelectronic Technology
关键词
真空提纯
N型
高阻
硅单晶
区熔(FZ)
vacuum purification
n-type
high resistivity
silicon single crystal
float zone（FZ）
