期刊文献+

环境障涂层研究进展 被引量:20

Development of Environmental Barrier Coatings on Si-based Ceramics
在线阅读 下载PDF
导出
摘要 硅基非氧化物陶瓷SiC、Si3N4是最有可能取代镍基高温合金作为在更高温度下发动机热端部件中使用的高温结构材料,制约其应用的重要因素是其在发动机工作环境中的表面稳定性不足,硅基非氧化物陶瓷能够和水蒸汽等反应生成挥发性的产物造成陶瓷表面结构退化、尺寸减小。解决这一问题的方法是在硅基非氧化物陶瓷表面涂敷或沉积环境障涂层,通过涂层阻止腐蚀性气氛和陶瓷基体的接触,提高陶瓷基体的表面稳定性。本文回顾了环境障涂层的发展历史,并重点对多种先后发展起来的环境障涂层体系的性能进行了介绍和评价。 Non-oxide silicon-based ceramics (NOSBC) such as silicon nitride (Si3N4 ) or silicon carbide (SiC) are the leading candidates to displace Ni-based superalloys for high temperature structural components in the next generation gas turbine engines. One key stumble block for such an application is NOSBC's deficiency in environmental durability. The protective silica scale on the NOSBC's surface can react with water vapor, which lead to the formation of a gas state Si(OH) 4 specie. The environmental barrier coatings (EBCs) outside the NOSBC can prevent the substrate from the vapor and improve the substrate's environmental durability greatly. In this paper the process of EBCs development was reviewed and the advantages and disadvantages of several EBCs were discussed.
出处 《失效分析与预防》 2007年第1期59-64,共6页 Failure Analysis and Prevention
关键词 环境障涂层 硅基结构陶瓷 高温结构材料 environmental barrier coatings Si-based ceramics high temperature structural material
  • 相关文献

参考文献21

  • 1[1]M.N.Menon,H.T.Fang,D.C.Wu,et al.Creep and stress rupture behavior of an advanced silicon nitride,part Ⅰ-Ⅲ[J].J.Am.Ceram.Soc.,1994,77(5):1217-1241.
  • 2[2]C.J.Gasdaska.Tensile creep in an in situ reinforced silicon nitride[J].J.Am.Ceram.Soc.,1994,77(9):2408-2418.
  • 3[3]A.Rendtel,H.Hübner,M.Herrmann,et al.Si3N4/SiC nanocomposite materials:Ⅱ.Hot strength,creep,and oxidation resistance[J].J.Am.Ceram.Soc.,1998,81(5):1109-1120.
  • 4[4]H.Klemm,Chr.Schubert and W.Hermel.High-temperature oxidation of non-oxide silicon based materials[A].In Proc.10th Int.IUPAC Conf on High Temperature Materials[C].2000,15,Part Ⅱ:541 -544.
  • 5[5]H.Klemm,Chr.Schubert.Silicon nitride/molybdenum disilicide composite with superior long-term oxidation resistance at 1500℃[J].J.Am.Ceram.Soc.,2001,84(10):2430 -2432.
  • 6[6]E.J.Opila,R.E.Hann Jr..Paralinear Osidation of SiC in Water Vapor[J].J.Am.Ceram.Soc.,1997,80(1):197 -205.
  • 7[7]E.J.Opila.Variation of the Oxidation Rate of Silicon Nitride with Vapor Pressure[J].J.Am.Ceram.Soc.,1999,82(3):625-636.
  • 8[8]R.C.Robinson and J.L.Smialek.SiC recession caused by SiO2 scale volatility under combustion conditions:I,experimental results and empirical model[J].J.Am.Ceram.Soc.,1999,82(7):1817 -1825.
  • 9[9]K.L.More,P.F.Tortorelli,M.K.Ferber,et al.Observations of accelerated silicon carbide oxidation at high water-vapor pressures[J].J.Am.Ceram.Soc.,2000,83(1):211 -213.
  • 10[10]I.Yuri,T.Hisamatsu,Y.Etori,et al.Degradation of Silicon Carbide in Combustion Gas Flow at High-Temperature and Speed[J].JSME International Journal Series A,2001,44(4):520 -527.

同被引文献148

引证文献20

二级引证文献125

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部