摘要
本文首次分析了(100)硅在乙二胺——邻苯二酚水溶液(EPW)中进行各向异性腐蚀时所可能出现的白色残留物的化学组份。该残留物的生成条件取决于正常反应物在一定组份的EPW中的溶解度;邻苯二酚的含量对此溶解度有明显影响。文中讨论了预防残留物出现以获得近于镜面的(100)硅腐蚀面的各种措施。
The composition of the residue that may appear on etched surface of (100)orientated silicon using Ethylenediamine-Pyrocatechol-Water(EPW)solution has been determined. It has been found by experiments that the residue formation is dependent on the solubility of the normal reaction product in a certain composition of EPW solution. The pyrocatechol content of EPW solution affects the solubility obviously. The condition for residue formation is dete-mined. Potential methods for preventing residue and forming etched silicon surface as a mirror shape are explored.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1990年第1期98-103,共6页
Acta Electronica Sinica
