摘要
在高纯半绝缘衬底上采用国产的外延技术和自己开发的器件设计及工艺技术,研制出在S波段连续波输出功率大于10 W、功率增益大于9 dB、功率附加效率不低于35%的性能样管,比研制初期的3～5 dB的功率增益得到了较大幅度的提高,初步显现了SiC器件在S波段连续波大功率、高增益方面的优势。采用亚微米光刻和低欧姆接触形成及减小附加寄生参量,使器件在更大功率输出的情况下,功率增益和功率附加效率得到了明显提升,证明采取的措施是有效的。
SiC-MESFET with an output power of 10W at S band was fabricated by domestic epitaxy technology and device design/process technology on high pure semi-insulating substrate. The device show that the power gain is larger than 9 dB and PAE is larger than 35 % which is much improved than the power gain of 3 - 5 dB at the beginning. With submicron lithography, low Ohmic contact and parasitical parameter reduction, the power gain and PAE of the device is not reduced but increased when the output power is increased.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第4期333-336,共4页
Semiconductor Technology
