1[1]OLDHAM W G, NEUREUTHER A R, SUNG C, et al. A general simulator for VLSI lithography and etching process: Part ii -- Application to deposition and etching [J].IEEE Trans Electron Devices, 1980, 27: 1455.
2[2]MCVITTIE J P. J. REY C, CHENG L Y, et al. LPCVD profile simulation using a Re-emission model [A]. IEDM 90[C].1990, 917-920.
3[3]HARAFUJI K, MISAKA A. Dry etching topography simulator with a new surface reaction model: MODERN [J]. IEEE Trans Electron Devices 1995, 42: 1903.
4[4]TAZAWA S, MATSUO S, SAITO K.A General characterization and simulation method for deposition and etching technology [J].IEEE Trans Semicond Manuf, 1992, 5 :27.
5[5]ZHOU R C, ZHANG H X, HAO Y Y, et al. Simulation of profile evolution in etching-polymerization alternation in DRIE of silicon with SF6/C4F8 [A]. MEMS 03 [C]. 2003, 161-164.
6F A Khan, L Zhou, V Kumar, et al. High rate etching of AIN using BCl3/Cl2/Ar inductively coupled plasma[J]. Materials Science and Engineering,2002,B 95:51 - 54.
7J Etrillard, J F Bresse, C Daguet,et al. Low damage dry etching of Ⅲ - V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma[J]. J Vac Sci Technol, 1999,A 17(4) : 1174 - 1181.
8B Ronga, E van der Drift, R J Reeves, et al. Inductively coupled plamaa etching of CaN and its effect on electrical characteristics[J]. J Vac Sci Technol, 2001,B19(6) : 2917- 2920.
9Y J Lee, S W Hwang, G Y Yeom,et al. Etch- induced damage in single crystal Si trench etching by planar inductively coupled Cl2/N2 and Cl2/HBr plasmas[J ]. Thin Solid Films, 1999, (341) :168- 171.
10S Bretoiu, D Di Mola, E Fioravanti, et al. Inductively coupled plasma etching for arrayed waveguide gratings fabrication in silica on silicon technology[J]. J Vac Sci Technol,2002, B 20(5) :2085 - 2090.
