摘要
用(ZnO)1-x(Al2O3)x(x=w(Al2O3)=0、0.01、0.02、0.05)陶瓷靶材为原料,通过电子束反应蒸发生长了非故意掺杂及Al掺杂的ZnO薄膜.采用X射线衍射、Raman散射及霍尔效应技术研究了薄膜的晶体微结构及电学特性.结果表明,由(ZnO)1-x(Al2O3)x(x≤0.02)的靶材生长得到的Al掺杂ZnO薄膜仍具有高度c-轴取向的纤锌矿晶体结构,但随着薄膜中Al掺入量的增加,其c-轴取向性有所退化;Raman光谱测量表明,Al掺杂ZnO薄膜的本征内应力随着Al掺入量的增加而增大,(ZnO)0.98(Al2O3)0.02薄膜中Al和Zn的原子个数比为6∶94,此时薄膜的内应力已接近饱和;Al掺杂ZnO薄膜的电阻率随着Al掺入量的增加呈现先减小后增大的特征,(ZnO)0.98(Al2O3)0.02薄膜具有最小的电阻率(7.85×10-4Ω.cm),这归因于该类薄膜同时具有高电子浓度(1.32×1021cm-3)和较高的电子迁移率(6.02 cm2/(V.s)).
Al-doped ZnO films were grown by reactive electron beam evaporation with ceramic targets, （ZnO）1-x（Al2O3）x（x=ω（Al2O3）=0、0.01、0.02、0.05）, as source materials. The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction, Raman scattering and Hall investigations. The results showed that Al-doped ZnO films grown from （ZnO）i-x （Al2O3）x （x≤0.02） targets were still highly c-axis oriented, although the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films. Raman scattering measurements indicated that the internal stress in Al-doped ZnO films increased along with the increase of Al content in the films and reached saturation in the case of x = 0. 02. The actual atomic Al content in the films grown using （ZnO）0.98 （Al2O3）0.02 target was 6%, which was normalized with the Zn content in the film. The resistivity of Al-doped ZnO films first decreased with the increase of Al content in the film and reached a minimum of 7.85）〈 10^-4 Ω·cm at x=0.02, then increased with further increase of Al content in the film. The nature of the minimum resistivity of Al-doped ZnO films grown using （ZnO）0.98 （Al2O3）0.02 target was ascribed to the high electron density （1.32 ×10^21 cm^-3） as well as its high electron mobility of 6.02 cm^2/（V · s）.
出处
《浙江大学学报（工学版）》
EI
CAS
CSCD
北大核心
2006年第11期1873-1877,共5页
Journal of Zhejiang University：Engineering Science
基金
国家自然科学基金资助项目(50472058)
关键词
ZNO薄膜
AL掺杂
微结构
电学特性
ZnO thin film
Al-doping
microstructure
electrical property
