摘要
采用射频磁控溅射技术,在常温状态下在玻璃衬底上制备了Al掺杂ZnO透明导电薄膜.利用XRD和AFM分别对薄膜的晶体结构和表面微观形貌进行了表征,利用紫外-可见分光光度计和霍尔效应测试仪对薄膜的光电性能进行了测试,并分析讨论了不同溅射气压对Al掺杂ZnO薄膜结构、形貌和光电性能的影响.结果表明,在本实验条件下制备的薄膜均为良好的c轴择优取向;在可见光范围内样品的平均透过率都高于85%;在溅射气压为1.2Pa时,薄膜的结晶度、电阻率和透过率都达到了最佳值.
The Al doped ZnO transparent conductive films were prepared under the room temperature on glass substrate by RF magnetron sputtering technology.The crystal structure and surface microstructure were characterized by XRD and AFM,respectively.UV-vis spectrophotometer and hall effect measurement system were used to investigate the photoelectric properties of the film.The effects of different sputtering pressure on the structure,morphology and optical performance were discussed.The results show the prepared films possess good c axis preferred orientation and the average visible light transmittance of films are higher than 85% at the sputtering pressure of 1.2Pa.
作者
高松华
高立华
肖荣辉
GAO Song-hua GAO Li-hua XIAO Rong-hui(School of Physics and Mechanical ＆ Electrical Engineering, Sanming University, Sanming 365004, Chin)
出处
《洛阳师范学院学报》
2017年第2期33-36,共4页
Journal of Luoyang Normal University
基金
福建省教育科研基金资助项目(JAT160462)
福建省三明学院科研基金资助项目(B201611
B201110/Q)
关键词
磁控溅射
Al掺杂ZnO薄膜
溅射气压
电阻率
透过率
magnetron sputtering
Al doped ZnO Film
sputtering pressure
resistivity
transmittance
