摘要
介绍了几种后CMOS器件可能的候选器件:谐振隧道器件、单电子晶体管、碳纳米管晶体管、分子器件和自旋晶体管。
Several new devices which are the candidates of post CMOS devices possibly were introduced, including resonant tunneling transistors, single-electron transistors, CNTFETs, molecular devices and spin transistors.
出处
《微纳电子技术》
CAS
2006年第11期505-507,529,共4页
Micronanoelectronic Technology
