摘要
由于外延技术的快速发展与进步，作为量子耦合器件及其电路里程碑的谐振隧道量子器件（ＲＴＤ）引起了学术界的密切关注。ＲＴＤ可使电路密度增大，速度提高，且单位器件的逻辑功能高于传统的晶体管。文中分析了谐振隧道二极管的工作原理、重要物理现象，并对有关设计问题进行了讨论。
Resonant tunneling devices have brought to much attention in the industry since the decade.The principle and physical phenomena of the device are described.The structure of resonant tunneling diodes and problems associated with the design of the device are discussed.
出处
《微电子学》
CAS
CSCD
北大核心
1999年第2期123-127,共5页
Microelectronics
关键词
谐振隧道器件
量子耦合器件
砷化镓
Resonant tunneling device,Quantum coupled device,GaAs EEACC 2560
