摘要
利用X射线衍射技术、荧光光谱、霍尔效应和光学显微等方法分别研究了ZnO单晶的晶格完整性、深能级缺陷、电学性质、位错和生长极性.通过比较ZnO单晶材料在退火前后的测试结果,分析了材料的缺陷属性和缺陷对材料性质、晶体完整性的影响.
Lattice perfection,deep level defects,electrical properties,dislocations,and the growth polarity of bulk ZnO single crystal are characterized with X-ray diffraction, photoluminescence, the Hall＇ effect, and optical microscopy. The influence of the defects on the material properties is discussed through comparison of the ZnO single crystal before and after annealing.
关键词
ZNO
缺陷
单晶
zinc oxide
defect
single crystal
