摘要
研究了原生和高温退火处理后非掺n型和半绝缘InP单晶材料中产生的缺陷.在磷气氛下退火后,n型和半绝缘InP单晶中均明显产生相当数量的深能级缺陷,而在磷化铁气氛下退火后,InP的缺陷数量明显减少.在退火过程中缺陷的产生与磷和铁的内扩散有直接关系.向内扩散的磷原子和铁原子占据晶格中铟位后,分别产生反位缺陷和铁深受主.实验结果表明,铁通过扩散充分占据了铟位,抑制了铟空位、磷反位等缺陷的形成,而磷气氛下退火后产生的缺陷有铟空位、磷反位等.对InP中的缺陷属性进行了分析.
Deep level defects in as-grown and annealed n-type and semi-insulating InP have been studied. After annealing in phosphorus ambient, a large quantity of deep level defects were generated in both n-type and semi-insulating InP materials. In contrast, few deep level defects exist in InP after annealing in iron phosphide ambient. The generation of deep level defects has direct relation with in-diffusion of iron and phosphorus in the annealing process. The in-diffused phosphorus and iron atoms occupy indium sites in the lattice, resulting in the formation of P anti-site defects and iron deep acceptors, respectively. The results indicate that iron atoms fully occupy indium sites and suppress the formation of indium vacancy and P anti-site, etc., whereas indium vacancies and P anti-site defects are formed after annealing in phosphorus ambient. The nature of the deep level defects in InP has been studied based on the results.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第3期1476-1479,共4页
Acta Physica Sinica
