摘要
系统地研究了热丝化学气相沉积技术中沉积气压、气体流量、钨丝温度、衬底温度对硅薄膜的结构、生长速率和光电性能的影响。通过优化各工艺参数。
The effects of deposition pressure, silane flow rate, filament temperature, substrate temperature on the structure, deposition rates and photoconductivity properties of silicon film prepared by hot wire (CVD) technique were systematically studied. By using optimized parameters, amorphous silicon thin films with p/d about 104 and polycrystalline silicon thin films with crystallite sizes about 0.11 m were obtained.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1999年第4期293-297,292,共6页
Chinese Journal of Rare Metals
关键词
热丝法
非晶硅薄膜
多晶硅薄膜
PECVD
Hot wire CVD, Amorphous silicon thin film, Polycrystalline silicon thin film
