摘要
为了分析逆变器中杂散电感对集成门极换相晶闸管(IntegratedGateCommucatedThyristor,简称IGCT)端部电压的影响,利用PSpice软件包建立了IGCT的2T-3R子电路模型,得出了考虑逆变电路中杂散电感影响的IGCT端部电压仿真波形。分析对比后可知,在杂散电感较大的情况下,尤其是换流回路杂散电感较大时,会使IGCT输出端产生过电压,严重时会使IGCT击穿。通过安装关断吸收电路,可以有效地降低IGCT的端部过电压。
In order to analyze the influence of stray inductances on anode-cathode voltage of IGCT （Integrated Gate Commucated Thyristor） in the inverter,a single 2T-3R simulation model of IGCT is established and the influence of stray inductances on anode-cathode voltage of IGCT is simulated using PSpice（Personal Simulation program with IC emphasis）. In the case of large stray inductance, especially when the stray inductances in commucated sub-circuit are high, the influence on anode-cathode voltage of IGCT becomes more obvious and even leads to a breakdown of IGCT.The over-vohage of IGCT can be depressed evidently by installing RC snubber circuit.
出处
《电力电子技术》
CSCD
北大核心
2006年第5期138-139,129,共3页
Power Electronics
