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与标准集成电路工艺兼容的硅基光学器件研究 被引量:1

A review on silicon photonics devices compatible with standard integrated circuits processes
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摘要 着重介绍了与标准集成电路工艺兼容的硅基光学器件的最新研究进展,包括硅基光发射器、硅基光波导和调制器件、硅基光电探测器和接收机以及硅基光电子集成回路的工作原理、制作工艺和集成技术.与标准集成电路工艺兼容的硅基光电子集成回路能有效地解决电互连芯片内部串扰、带宽和能耗等问题,并能够充分利用现有成熟的集成电路工艺,实现大规模生产,具有广阔的实用前景. This paper introduces the latest advancement in silicon photonics compatible with standard integrated circuits processes, including the theory and design methods of silicon-based light emitting devices(LED), optical waveguides and modulators, optical detectors and receivers, and silicon optoelectronics integration (Si-OEIC). Silicon based optoelectronics integration compatible with standard integrated circuits processes could eliminate the influences of the crosstalk, bandwidth and power consumption in electrical interconnection. It has broad prospects in application.
出处 《高技术通讯》 CAS CSCD 北大核心 2006年第9期985-989,共5页 Chinese High Technology Letters
基金 863计划(2002AA312240,2003AA312040)和国家自然科学基金(60536030)资助项目.
关键词 集成电路工艺 硅基光电子集成回路 全硅光互连 integrated circuits processes, silicon optoelectronics integration (Si-OEIC), all silicon optical interconnection
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参考文献20

  • 1Newman R.Visible light from a silicon p-n junction.Physics Review,1955,100:700-703
  • 2Snyman L W,M.du Plessis,et al.An efficient low voltage,high frequency silicon CMOS light emitting device and electro-optical interface.IEEE Electron Device Letters,1999,20(12):614-616
  • 3Ng W L,Loenco M A,Gwilliam R M,et al.An efficient room-temperature silicon based light emitting diode.Nature,2001,410:192-194
  • 4Green M A,Zhao J,Wang A,et al.Efficient silicon lightemitting diodes.Nature,2001,412:805-808
  • 5Chen H,Sun Z,Liu H,et al.A silicon light emitting device in standard CMOS technology.IEEE 1 st International Conference on Group Ⅳ Photonics,Hong Kong,2004
  • 6Sun Z,Chen H,Mao L,et al.Simulation of a silicon LED in standard CMOS technology.Chinese Journal of SemiconducTors,2003,25 (3):255-259
  • 7Rong H,Liu A,Jones R,et al.An all silicon Raman laser.Nature,2005,433:292-294
  • 8Rong H,Jones R,Liu A,et al.A continuous-wave Raman silicon laser.Nature,2005,433:725-728
  • 9Sciuto A,Libertino S,Coffa S.Design fabrication and testing of an integrated Si-based light modulator.Proc of SPIE,2003,4947:74-83
  • 10Liu A,Jones R,Liao L,et al.A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor.Nature,2004,427:615-618

二级参考文献10

  • 1[1]Childers J E,Morris J E,Eildman E R.SPIE,1993,1849:292
  • 2[2]Woodward T K,Krishnamoorthy A V.IEEE Journal of Selected Topics in Quantum Electronics,1999,5(2):146
  • 3[3]Kuchta D M,Ainspan H A,Canora F J,et al.IBM J Res Develop,1995,39(1/2):67
  • 4[4]Yoshida Takeshi,Ohtomo Yusuke,Shimaya Masakazu,et al.IEDM1998 CD edition
  • 5[5]He Y S,Garrett L D,Lee K -H,et al.Electronics Letters,1994,30(22):1887
  • 6Zimmermann H,Heide T,Pless H.High-performance receivers for optical interconnects in standard MOS technology.Proc SPIE Int,2001,4292:1.
  • 7Woodward T K,Krishnamoorthy A V.1-Gb/s integrated optical detectors and receivers in commercial CMOS technologies.IEEE J Sel Topics Quantum Electron,1999,5(2):146.
  • 8Zimmermann H,Heide T.A monolithically intergrated 1-Gb/s optical receiver in 1-μm CMOS technology.IEEE Photonics Technol Lett,2001,13(7):711.
  • 9Mao Luhong,Chen Yongquan,Li Wei,et al.Circuit model of double photodiodes for high-speed OEIC receivers.Proc SPIE Int,2005,5644:444.
  • 10毛陆虹,陈弘达,吴荣汉,唐君,梁琨,粘华,郭维廉,李树荣,吴霞宛.与CMOS工艺兼容的硅高速光电探测器模拟与设计[J].Journal of Semiconductors,2002,23(2):193-197. 被引量:11

共引文献13

同被引文献9

  • 1代晓光,牛萍娟,张宇,陈弘达,毛陆虹,郭维廉.全硅片上光互连用波导[J].激光与光电子学进展,2006,43(8):27-31. 被引量:2
  • 2Sveinbjornsson E O, Weber J. Room temperature electroluminescence from dislocation-rich silicon [ J ]. Appl Phys Lett, 1996,69 ( 28 ): 2686-2688.
  • 3Wai Lek Ng,Lourenco M A,Gwilliam R M,et al.An efficient room-temperature silicon-based light-emitting diode [ J ] .Nature, 2001,410 ( 6825 ): 192-194.
  • 4Zbang Xinyi, Dou Kai, Hong Qiang, et al. Radiative and nonradiative recombination of bound excitons in GaP.N. ( I ): Temperature behavior of zero-phonon line and phonon sidbands of bound excitons [ J ]. Phys Rev B, 1990,41 ( 3 ): 1376-1381.
  • 5Dekorsy T,Sun J M,Skorupa W,et al.Light-emitting silicon pn diodes [ J ] .Appl Phys A, 2004, 78 ( 4 ): 471- 475.
  • 6Sun J M, Dekorsy T, Skorupa W, et al. Below-band-gap electroluminescence related to doping spikes in boronimplanted silicon pn diodes [ J ] .Phys Rev B, 2004,70 ( 15 ): 155316-1-11.
  • 7Sun J M, Dekorsy T, Skorupa W, et al. Boundexciton-induced current bistability in a silicon lightemitting diode [J ] .Appl Phys Letters, 2003,82 ( 17 ) : 2823-2825.
  • 8Sun J M, Dekorsy T, Skorupa W, et al. Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes [ J ] .Appl Phys Letters, 2003,83 ( 19 ):3885-3887.
  • 9Kane D E, SwansonR M. The effect of excitons on apparent band gap narrowing and transport in semiconductor [ J]. Appl Phys, 1993,73 ( 3 ) : 1193- 1197.

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