摘要
硅基波导型光电探测器作为一类重要的光电探测器,由于其能与标准的CMOS工艺兼容以及制备工艺简单等性能,因而在光电子单片集成方面具备广阔的市场应用前景。文章着重阐述了通过离子注入引入深能级、Ge/Si自组装岛、SOI波导共振腔增强和AlGaInAs-Si混合集成等四种方式来制备硅基光电探测器的研究现状和研究进展,并对四类器件的结构,制作工艺和光电性能指标进行了详细地介绍。
As a important type of photodetector, silicon-based photodetector has great market application potential due to cmos-compatible performance and simple fabrication process. This field is greatly emphasized by many international research institutions. This paper will introduce the development of silicon photodector that are fabricated by self ion implantation,. Ge/Si self-assembled islands, RCE, hybrid AIGaInAs-Si, and will discuss the device structure, fabrication process and photo-electronic performance.
出处
《光通信技术》
CSCD
北大核心
2009年第5期38-40,共3页
Optical Communication Technology
基金
国家自然科学基金(No.60776046)资助
国家自然科学重点基金(No.O912030003)资助
国家基础研究973(No.2006CB302802)资助
